? 2013 ixys corporation, all rights reserved 600v xpt tm igbt genx3 tm v ces = 600v i c110 = 130a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.20v t fi(typ) = 114ns symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 240 a i lrms terminal current limit 200 a i c110 t c = 110c 130 a i cm t c = 25c, 1ms 720 a i a t c = 25c 75 a e as t c = 25c 750 mj ssoa v ge = 15v, t vj = 150c, r g = 2 ? i cm = 300 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 830 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c v isol 50/60hz t = 1min 2500 v~ i isol ? 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in terminal connection torque 1.3/11.5 nm/lb.in weight 30 g ds100548a(11/13) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 150c 1 ma i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 150a, v ge = 15v, note 1 1.86 2.20 v t j = 150c 2.26 v features ? optimized for low conduction and switching losses ? minibloc, with aluminium nitride isolation ? international standard package ? isolation voltage 2500 v~ ? optimized for 10-30khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? high current handling capability advantages ? high power density ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts extreme light punch through igbt for 10-30khz switching IXYN150N60B3 sot-227b, minibloc g = gate, c = collector, e = emitter ? either emitter terminal can be used as main or kelvin emitter g e ? ? e ? c e153432 e preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYN150N60B3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 27 45 s c ie s 6430 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 410 pf c res 140 pf q g(on) 200 nc q ge i c = 150a, v ge = 15v, v ce = 0.5 ? v ces 52 nc q gc 80 nc t d(on) 34 ns t ri 68 ns e on 3.3 mj t d(off) 158 ns t fi 114 ns e of f 2.6 mj t d(on) 32 ns t ri 68 ns e on 4.1 mj t d(off) 200 ns t fi 140 ns e off 3.6 mj r thjc 0.18 c/w r thcs 0.05 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c ? c = 75a, v ge = 15v v ce = 400v, r g = 2 ? note 2 inductive load, t j = 25c i c = 75a, v ge = 15v v ce = 400v, r g = 2 ? note 2 sot-227b minibloc (ixyn) prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXYN150N60B3 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 00.511.522.533.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 9v 11v 8v 7v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 10v 11v 12v 8v 9v 13v 7v fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 8v 9v 7v 6v 12v 11v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 150a i c = 75a i c = 300a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 300a t j = 25oc 150a 75a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 220 4567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYN150N60B3 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc, 25oc, 150oc fig. 10. reverse-bias safe operating area 0 50 100 150 200 250 300 350 100 200 300 400 500 600 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 q g - nanocoulombs v ge - volts v ce = 300v i c = 150a i g = 10ma fig. 9. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 11. forward-bias safe operating area 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms v ce(sat) limi t 100s fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2013 ixys corporation, all rights reserved IXYN150N60B3 fig. 13. inductive switching energy loss vs. gate resistance 1 2 3 4 5 6 7 8 9 2468101214 r g - ohms e off - millijoules 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 60 80 100 120 140 160 180 200 220 240 260 23456789101112131415 r g - ohms t f i - nanoseconds 140 180 220 260 300 340 380 420 460 500 540 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 17. inductiv e turn-off switching times v s. collector current 80 100 120 140 160 180 200 220 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanosecond s 120 140 160 180 200 220 240 260 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 80 100 120 140 160 180 200 220 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 120 140 160 180 200 220 240 260 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXYN150N60B3 ixys ref: ixy_150n60b3(8d) 7-18-13 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanosecond s 26 28 30 32 34 36 38 40 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 26 28 30 32 34 36 38 40 42 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 23456789101112131415 r g - ohms t r i - nanosecond s 20 28 36 44 52 60 68 76 84 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 50a i c = 100a
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